Fermi level pinning in Co‐doped BaTiO <sub>3</sub> : Part II. Defect chemistry models
نویسندگان
چکیده
A first-principles informed grand canonical defect chemistry model capable of accounting for non-stoichiometry and partial equilibration different sub-lattices is developed used to study Mg Mn doped, (Mg+Y) (Mn+Y) co-doped BaTiO3 elucidate the role Y in improving resistivity resistance degradation as observed by Ryu et al. Part I this series papers. The qualitatively captures behavior samples all conditions, reproducing carrier plateau increased BaTiO3, expected trends concentrations free oxygen vacancies with doping. These reflect differences characteristics, help explain substantially improved samples. Our adds mechanism proposed Yeoh that Fermi level pinned multivalent character MnTi giving insight into barium vacancies, site preferences dopants, complexes mechanism. insights provide a set criteria search sets co-dopants similar behaviors.
منابع مشابه
Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts
Understanding the electronic contact between molybdenum disulfide (MoS2) and metal electrodes is vital for the realization of future MoS2-based electronic devices. Natural MoS2 has the drawback of a high density of both metal and sulfur defects and impurities. We present evidence that subsurface metal-like defects with a density of ∼1011 cm-2 induce negative ionization of the outermost S atom c...
متن کاملFermi-level pinning can determine polarity in semiconductor nanorods
First-principles calculations of polar semiconductor nanorods reveal that their dipole moments are strongly influenced by Fermi-level pinning. The Fermi level for an isolated nanorod is found to coincide with a significant density of electronic surface states at the end surfaces, which are either mid-gap states or band-edge states. These states pin the Fermi level, and therefore fix the potenti...
متن کاملPropagative Landau states and Fermi level pinning in carbon nanotubes.
We present strong evidence of Landau states formation in multiwalled carbon nanotubes with metallic or semiconducting outer shells, under magnetic fields as high as 60 T. Magnetoconductance data are found to converge to a gate-independent value for semiconducting shells, whereas for metallic shells, the Landau states introduce a strong reintroduction of backscattering and Fermi level pinning cl...
متن کاملSurface recombination, surface states and Fermi level pinning
2014 Surface and interface recombination processes, which are becoming more and more important with the appearance of small-size optoelectronic devices, are still not well understood because reliable data are very scarce. We report here the first simultaneous in situ measurements of the density and position of surface states, of the position of the Fermi level at the surface, and of the surface...
متن کاملAbsence of Fermi-level pinning at cleaved nonpolar InN surfaces.
Prior experimental work had found that the Fermi level at InN growth surfaces is pinned well above the conduction band edge, leading to strong surface band bending and electron accumulation. Using cross-sectional scanning photoelectron microscopy and spectroscopy, we show definitive evidence of unpinned Fermi level for in situ cleaved a-plane InN surfaces. To confirm the presence or absence of ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the American Ceramic Society
سال: 2021
ISSN: ['0002-7820', '1551-2916']
DOI: https://doi.org/10.1111/jace.17938